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15:00 |
HL 35.1 |
Properties and definitions of the spin current — •Thorsten Arnold, Vidar Gudmundsson, and Frank Ortmann
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15:00 |
HL 35.2 |
Spin Hall conductivity in topological insulators — •Francisco Mireles and John Schliemann
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15:00 |
HL 35.3 |
Spin dynamics of Ce3+ ions in YAG crystals — •Felix Fobbe, Vasilii Belykh, Donghai Feng, Eiko Evers, Dmitry Yakovlev, and Manfred Bayer
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15:00 |
HL 35.4 |
Fine structure and coherent spin manipulation of the hidden transition of VSi in 4H-SiC — •Matthias Niethammer, Sang-Yun Lee, Matthias Widmann, Ian Booker, Torsten Rendler, Takeshi Oshima, Nguyen Tien-Son, Erik Janzón, and Joerg Wrachtrup
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15:00 |
HL 35.5 |
All optical EPR in magnetically doped quantum structures — •Markus Kuhnert, Ilya Akimov, Dmitri Yakovlev, and Manfred Bayer
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15:00 |
HL 35.6 |
Spin-flip Raman scattering of the Mn2+ ions in (Zn,Mn)Se quantum wells — •Carolin Lüders, Henning Moldenhauer, Philipp Waldkirch, Dennis Kudlacik, Victor F. Sapega, Andreas Waag, Jörg Debus, and Manfred Bayer
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15:00 |
HL 35.7 |
Conductance Correction in semiconductor nanorods with Rashba and Dresselhaus Spin-Orbit Coupling — •Michael Kammermeier, Paul Wenk, John Schliemann, Sebastian Heedt, and Thomas Schäpers
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15:00 |
HL 35.8 |
Identification and magneto-optical properties of the NV center in 4H-SiC — Hans Jürgen von Bardeleben, Jean-Louis Cantin, Soroush Abbasi-Zargaleh, Benoît Eblé, Sophie Hameau, Eva Rauls, and •Uwe Gerstmann
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15:00 |
HL 35.9 |
Time-resolved photoluminescence and spin dynamics of GaSe crystals — •Maike Halbhuber, Philipp Nagler, Christian Schüller, and Tobias Korn
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15:00 |
HL 35.10 |
Low magnetic field wavelength modulation absorption spectroscopy of donor bound excitons in 28Si:P — •Michael Beck, Helge Riemann, Jens Hübner, and Michael Oestreich
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15:00 |
HL 35.11 |
Spin Noise Spectroscopy on single InAs Quantum Dots — •Julia Wiegand, Ramin Dahbashi, Jens Hübner, Klaus Pierz, and Michael Oestreich
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15:00 |
HL 35.12 |
Stokes Polarimetry of Magnetic Linear Birefringence in Gallium Arsenide — •Pavel Sterin, Fabian Berski, Agnes Beichert, Jens Hübner, and Michael Oestreich
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15:00 |
HL 35.13 |
Weak Anti-Localization and Bulk-Surface-Correspondence in Topological Insulators — •Sebastian Hutsch and Frank Ortmann
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15:00 |
HL 35.14 |
Topological phases in interfacial phase-change materials — •Peter Schmitz, Wei Zhang, Yuriy Mokrousov, and Riccardo Mazzarello
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15:00 |
HL 35.15 |
Constructing spintronic devices from topological insulators via combination with ferromagnetic materials — •Matthias Götte, Tomi Paananen, Günther Reiss, Michael Joppe, and Thomas Dahm
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15:00 |
HL 35.16 |
Superconductor-topological insulator junctions based on an Sb2Te3/Bi2Te3 p-n heterostructure — •Daniel Rosenbach, Peter Schüffelgen, Martin Lanius, Jörn Kampmeier, Gregor Mussler, Markus Eschbach, Ewa Mlynczak, Lukasz Plucinski, Martina Luysberg, Stefan Trellenkamp, Martin Stehno, Prosper Ngabonziza, Alexander Brinkman, Detlev Grützmacher, and Thomas Schäpers
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15:00 |
HL 35.17 |
Combined structural, electronic and transport investigations on metallic and semiconducting micro flakes from a topological insulator Bi2Se3 single crystal — •Dominic Lawrenz, Olivio Chiatti, Christian Riha, Marco Busch, Franz Herling, Srujana Dusari, Jaime Sanchez-Barriga, Anna Mogilatenko, Lada V. Yashina, Sergio Valencia, Ahmet A. Ünal, Oliver Rader, and Saskia F. Fischer
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15:00 |
HL 35.18 |
Terahertz radiation induced photocurrents in (Bi1−xSbx)2Te3 based topological insulators — •Helene Plank, Leonid E. Golub, Stefan Bauer, Vasily V. Bel’kov, Markus Eschbach, Lukasz Plucinski, Gregor Mussler, Detlev Grützmacher, and Sergey. D. Ganichev
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15:00 |
HL 35.19 |
Optical properties of compensated topological insulators — •Alessandro Revelli, Nick Borgwardt, Jonathan Lux, Zhiwei Wang, Ignacio Vergara, Malte Langenbach, Achim Rosch, Yoichi Ando, Paul van Loosdrecht, and Markus Grüninger
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15:00 |
HL 35.20 |
The structure and electrical properties of Se hyperdoped Si by ion implantation followed by short-time annealing — •Fang Liu, Slawomir Prucnal, Ye Yuan, Kun Gao, Yonder Berencén, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
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15:00 |
HL 35.21 |
In situ TEM investigations of the back surface field of aluminum in multi-crystalline silicon — •Hendrik Spende, Patrick Peretzki, and Michael Seibt
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15:00 |
HL 35.22 |
Si Nanowires Prepared by Glancing Angle Deposition Technique — •Andrii Kulyk, Christoph Grüner, Andriy Lotnyk, Dietmar Hirsch, Gal Schkolnik, Isom Hilmi, and Bernd Rauschenbach
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15:00 |
HL 35.23 |
Deep electronic levels in crystalline silicon after irradiation with femtosecond laser pulses in SF6-atmosphere — •Arne Ahrens, Philipp Saring, Anna Lena Baumann, Stefan Kontermann, and Michael Seibt
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15:00 |
HL 35.24 |
Structure and chemistry of crystalline silicon-aluminum oxide interfaces — •Arne Ahrens, Patrick Peretzki, and Michael Seibt
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15:00 |
HL 35.25 |
On deep level transient spectroscopy of extended defects in n-type 4H-SiC — •Jonas Weber, Heiko Weber, and Michael Krieger
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15:00 |
HL 35.26 |
ion implantation induced damage in nonpolar a-plane GaN films — •Fengfeng Cheng, Lin Li, Slawomir Prucnal, M. X. Feng, Qian Sun, J. Grenzer, M. Helm, and Shengqiang Zhou
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15:00 |
HL 35.27 |
Annealing behavior of Er implanted GaN — •Fengfeng Cheng, Linxiang Chi, Ding Li, Slawomir Prucnal, Fang Liu, René Heller, M. Helm, Xiaodong Hu, Guoyi Zhang, and Shengqiang Zhou
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15:00 |
HL 35.28 |
Nanoimprint lithography for selective area growth of GaN-based nanocolumns — •Stefan Behrenz and Philipp Henning
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15:00 |
HL 35.29 |
Structural and optical properties of a GaN/AlN quantum heterostructure — •Alexander Reuper, Gordon Schmidt, Silke Petzold, Peter Veit, Konrad Bellmann, Tim Wernicke, Frank Bertram, Michael Kneissl, and Jürgen Christen
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15:00 |
HL 35.30 |
Time-resolved photoluminescence spectroscopy of InGaN nanowires — •Vanessa Dahmen, Nils W. Rosemann, Pascal Hille, Jörg Schörmann, Felix Walther, Martin Eickhoff, and Sangam Chatterjee
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15:00 |
HL 35.31 |
Time-resolved luminescence studies of rare earth doped high pressure high temperature aluminium nitride — Tristan Koppe, Oliver Beck, Hans Hofsäss, and •Ulrich Vetter
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15:00 |
HL 35.32 |
Optical Characterization of GaN:Fe — •Sebastian Bauer, Matthias Hocker, Benjamin Neuschl, Maria L. Gödecke, Martin Klein, Frank Lipski, Eberhard Richter, Ferdinand Scholz, and Klaus Thonke
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15:00 |
HL 35.33 |
Self-catalyzed and Si-induced growth of vertically aligned InN nanorods by MOVPE — •C. Tessarek, S. Fladischer, C. Dieker, G. Sarau, B. Hoffmann, M. Bashouti, M. Heilmann, S. Figge, A. Gust, E. Spiecker, and S. Christiansen
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15:00 |
HL 35.34 |
Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods — •Christian Tessarek, Rüdiger Goldhahn, George Sarau, Martin Heilmann, and Silke Christiansen
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15:00 |
HL 35.35 |
Excitation spectroscopy of higher quantized states in GaInN quantum wells — •Tim Käseberg, Fedor Alexej Ketzer, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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15:00 |
HL 35.36 |
Ohmic Ti/Al/TiN Contacts to n-GaN Fabricated by Sputter Deposition — •Valentin Garbe, Juliane Walter, Wolfram Münchgesang, Alexander Schmid, Ronald Otto, Thomas Behm, Barbara Abendroth, and Dirk C. Meyer
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15:00 |
HL 35.37 |
Influence of the p-AlGaN superlattice on the performance characteristics of deep UV laser diode heterostructures — •E. Ziffer, M. Martens, C. Kuhn, T. Simoneit, J. Rass, T. Wernicke, A. Knauer, V. Kueller, M. Weyers, S. Einfeldt, and M. Kneissl
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15:00 |
HL 35.38 |
Influence of acceptor concentration on burn-in effects in AlGaN-based deep UV LEDs — •Jakob Jordan, Martin Guttmann, Frank Mehnke, Johannes Enslin, Simon Kapanke, Tim Wernicke, Mickael Lapeyrade, Markus Weyers, Sven Einfeldt, and Michael Kneissl
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15:00 |
HL 35.39 |
Deep UV light emitting diodes with transparent conductive electrodes of multi-layer graphene — •Luca Sulmoni, Marc Gluba, Norbert Nickel, Mickael Lapeyrade, Sven Einfeldt, Veit Hoffmann, Johannes Enslin, Christian Kuhn, Frank Mehnke, Tim Wernicke, and Michael Kneissl
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15:00 |
HL 35.40 |
Spectrally pure deep UV LEDs for gas sensing applications — •Frank Mehnke, Martin Guttmann, Johannes Enslin, Simon Kapanke, Christian Kuhn, Hendrik Krüger, Marian Rabe, Mickael Lapeyrade, Ute Zeimer, Sven Einfeldt, Tim Wernicke, Markus Weyers, and Michael Kneissl
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15:00 |
HL 35.41 |
Large-scale defect calculations using atomic effective potentials and LATEPP — •Elisabeth Dietze, Jerome Jackson, and Gabriel Bester
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15:00 |
HL 35.42 |
Optical Characterization of Ga(N,As,P)/(B,Ga)(As,P)/Ga(N,As,P) Heterostructures — •Julian Veletas, Peter Ludewig, Nils W. Rosemann, Kerstin Volz, Wolfgang Stolz, and Sangam Chatterjee
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15:00 |
HL 35.43 |
Influences of molecular flux gradients on the optical characteristics of GaAs/AlGaAs quantum wells — •Pia Eickelmann, Rüdiger Schott, Andreas D. Wieck, and Arne Ludwig
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15:00 |
HL 35.44 |
Local etching of a SiOx layer on Si(111) by Ga droplets and its influence on GaAs nanowire growth — •Tina Tauchnitz, Harald Schneider, Manfred Helm, and Emmanouil Dimakis
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15:00 |
HL 35.45 |
Treatment of concentrated solar radiation PV modules on the basis of AlGaAs-GaAs heterostructures — •Lia Trapaidze, Rafiel Chikovani, Ia Trapaidze, and Gela Goderdzishvii
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15:00 |
HL 35.46 |
GaAs/air Bragg mirrors to enable strong light-matter interaction — •Meico Heinke-Becker, Sascha René Valentin, Arne Ludwig, and Andreas D. Wieck
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15:00 |
HL 35.47 |
Microfabricated SiN-masks for selective area epitaxy of InAs and GaAs — •Viktoryia Zolatanosha and Dirk Reuter
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15:00 |
HL 35.48 |
Growth of Low Density InAs Quantum Dot Molecules — •Nandlal Sharma and Dirk Reuter
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15:00 |
HL 35.49 |
Emission wavelength tuning of InAs quantum dot molecules by rapid thermal annealing — •Alexander Karlisch, Nandlal Sharma, Stepan Shvarkov, and Dirk Reuter
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15:00 |
HL 35.50 |
In Plane Gate transistors based on GaAs as sensors for dielectrics — •Benjamin Feldern, Sascha Valentin, Arne Ludwig, and Andreas D. Wieck
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15:00 |
HL 35.51 |
Growth kinetics of GaP-nanowires employing TBP and TMGa — •Matthias Steidl, Christian Koppka, Peter Kleinschmidt, and Thomas Hannappel
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