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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.23: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Deep electronic levels in crystalline silicon after irradiation with femtosecond laser pulses in SF6-atmosphere — •Arne Ahrens1, Philipp Saring1, Anna Lena Baumann2, Stefan Kontermann2,3, and Michael Seibt11IV. Physikalisches Institut, Georg-August Universität Göttingen, Germany — 2Fraunhofer Heinrich Hertz Institut, Goslar, Germany — 3present address: Hochschule RheinMain, Rüsselsheim, Germany

Femtosecond laser pulse irradiation in sulfur hexafluoride (SF6) atmosphere leads to sulfur incorporation into the silicon beyond the solubility limit (hyperdoping) and structuring of the surface. Enhanced optical absorption in the sub-bandgap range due to introduced deep defect levels is known for such materials. This makes such a material a promising candidate for intermediate band solar cell applications, especially if impurity bands form due to a Mott transition. Considering a p-type silicon substrate, sulfur hyperdoping leads to the formation of a buried pn-junction which has been studied in detail by means of cross-section transmission electron microscopy (TEM) and electron-beam induced current (EBIC) [1] as well as capacitance-voltage (CV) and SIMS measurements [2]. This work presents results of additional cross sectional EBIC and TEM experiments. Furthermore, this work presents the results of an extensive deep-level transient spectroscopy (DLTS) study of deep levels in the vicinity of the buried pn-junction, which points out the existence of two dominant deep levels. [1] P. Saring et al., Appl. Phys. Lett. 103, 061904 (2013). [2] K.-M. Guenther et al., Appl. Phys. Lett. 102, 202104 (2013).

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