Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.28: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Nanoimprint lithography for selective area growth of GaN-based nanocolumns — •Stefan Behrenz and Philipp Henning — IV. Physikalisches Institut, Georg-August-Universität Göttingen

Ordered arrays of GaN-based nanocolumns provide a promising material basis for novel device applications. Selective area growth by means of a patterned metal mask is a suitable method for the growth of such structures. For the mask preparation a variety of lithography methods is used, most of which are time consuming if applied for a large number of substrates and on large scales. For this scope, nanoimprint lithography (NIL) has been proven to be an efficient method. Due to the fact that the structure size does not affect the processing time high throughput can be achieved. In this work, we show how NIL can be successfully applied for molecular beam epitaxy of GaN nanostructures. By means of soft imprinting homogeneously patterned arrays of sizes up to (400x400) µm² and column diameters ranging from 1200 nm down to 350 nm could be produced. The entire process has been optimized for the selective area growth of GaN. Compared to the growth on masks patterned by electron beam lithography an equally good quality is achieved.