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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.29: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Structural and optical properties of a GaN/AlN quantum heterostructure — •Alexander Reuper¹, Gordon Schmidt¹, Silke Petzold¹, Peter Veit¹, Konrad Bellmann², Tim Wernicke², Frank Bertram¹, Michael Kneissl², and Jürgen Christen¹ — ¹Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany — ²Institute of Solid State Physics, Technical University Berlin, Germany

III-nitride based quantum dots (QD) are promising candidates for room-temperature quantum emitters due to the large exciton binding energies and strong confinement of this material system. Using transmission electron microscopy combined with cathodoluminescence spectroscopy (STEM-CL) we report on structural and spatially resolved optical properties of a GaN/AlN heterostructure with GaN grown under low V/III ratio to promote QD formation.

The GaN layer has been grown by metal-organic vapor phase epitaxy on a c-plane AlN/sapphire template at 1050°C and immediately capped by AlN.

Structural investigations showed a continuously formed GaN layer with local thickness fluctuations. Nanoscale cathodoluminescence measurements at room temperature as well as 16 K revealed spots of high intensity within GaN-layer. Highly spatially resolved CL investigations show various sharp emission peaks around 300 nm from these spots.