Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.31: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Time-resolved luminescence studies of rare earth doped high pressure high temperature aluminium nitride — Tristan Koppe, Oliver Beck, Hans Hofsäss, and •Ulrich Vetter — II. Physikalisches Institut der Georg-August-Universität Göttingen, Deutschland

We report on studies of time-resolved defect luminescence processes in undoped and rare earth doped AlN. The material was synthesised by the temperature gradient method in a belt-type HP-HT apparatus. As solvent Li₃AlN₂ is used which was, in the case of doped samples, previously mixed with e. g. EuF₃ to achieve rare earth doped AlN.

The measurements were realised with a tunable femtosecond laser system, which contributes excitation energies from deep UV up to the near infrared region. In combination with a Streak Camera time-resolved spectra with time windows between 1 ns and several hundred milliseconds from 200 - 800 nm with temporal resolutions down to 20 ps are achievable.

To overcome the limitation of the Streak Camera system to measure lifetimes in the millisecond range or above, for e. g. to investigate longer living rare earth decays as well as some types of long living defect related luminescences in AlN, the connected trigger system was extended by an additional trigger unit.