Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.33: Poster
Dienstag, 8. März 2016, 15:00–19:00, Poster A
Self-catalyzed and Si-induced growth of vertically aligned InN nanorods by MOVPE — •C. Tessarek1,2,3, S. Fladischer4, C. Dieker4, G. Sarau1,2, B. Hoffmann2, M. Bashouti2, M. Heilmann2, S. Figge5, A. Gust5, E. Spiecker4, and S. Christiansen1,2,6 — 1Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin — 2Max Planck Institute for the Science of Light, Erlangen — 3Institute of Optics, Information and Photonics, Friedrich-Alexander-University Erlangen-Nürnberg — 4Institut für Mikro- und Nanostrukturforschung & Center for Nanoanalysis and Electron Microscopy (CENEM), Friedrich-Alexander-University Erlangen-Nürnberg — 5Institute of Solid State Physics, University of Bremen — 6Physics Department, Freie Universität Berlin
InN with its small photonic and large phononic band gap has the potential to be used for hot carrier solar cells. However, InN layers suffer from high defect densities due to the lack of native substrates. A self-catalyzed nanorod approach carried out in metal-organic vapor phase epitaxy is used to reduce the defect density leaving the upper part of the nanorods nearly free of defects. A detailed study of growth parameters influencing the formation and morphology of InN nanorods is carried out. The structural properties are analyzed using transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. The optical properties are investigated using cathodoluminescence. Finally, the similarities between InN and GaN nanorod growth will be discussed.