DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.4: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Fine structure and coherent spin manipulation of the hidden transition of VSi in 4H-SiC — •Matthias Niethammer1, Sang-Yun Lee1, Matthias Widmann1, Ian Booker2, Torsten Rendler1, Takeshi Oshima3, Nguyen Tien-Son2, Erik Janzón2, and Joerg Wrachtrup113.Physikalisches Institut, Universitaet Stuttgart — 2Department of Physics, Chemistry and Biology, Linkoeping University — 3Japan Atomic Energy Agency, Takasaki

Silicon carbide has recently been recognized as a promising host material for mainstream room temperature quantum devices based on defects [1]. The silicon vacancy is a point defect with a spin 3/2 ground state and a zero field splitting of 70MHz which allows for optical control and coherent manipulation even on the single spin level at room temperature [2]. As high impurity density is detrimental for defect based solid state quantum systems, wafer quality is a concern. Here we analyse various fine structures in optically detected spin signal at low magnetic field and present likely models related to wafer quality for their origin. When an axial magnetic field is applied, the spin Hamiltonian predicts three transitions, but usually only two are visible due to equal population. The third transition previously has been revealed by ENDOR measurements [3]. We demonstrate the hidden transition (ms=−1/2↔ ms=1/2) also becomes optically observable by inducing population difference using ELDOR. Additionally we present the coherent manipulation of this hidden transition. 1. Weber et al, PNAS 2010 107 (19) 8513-8518 2. Widmann et al, Nat. Mater 14, 164-168 (2015) 3. Mizuochi et al, Phys. Rev. B 72, 235208 (2005)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg