DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.42: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Optical Characterization of Ga(N,As,P)/(B,Ga)(As,P)/Ga(N,As,P) Heterostructures — •Julian Veletas1, Peter Ludewig2, Nils W. Rosemann1, Kerstin Volz1, Wolfgang Stolz1,2, and Sangam Chatterjee11Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany

The quarternary semiconductor alloy Ga(N,As,P) is a promising material system for laser devices on silicon substrates to open up new routes towards off-chip optical data transmission. While the active material Ga(N,As,P) is comparatively well characterized many questions remain regarding the optoelectronic properties of the barrier material (BGa)(AsP). In particular, the hetero-offsets at the (B,Ga)(As,P)/Ga(N,As,P) Interface remain under discussion. Several scenarios discussed including a staggered band alignment, which would offer the potential for advanced W-Laser structures at telecom wavelength. Here, a series of Ga(N,As,P) /(B,Ga)(As,P)/Ga(N,As,P) *W-structures* are investigated by modulation and photoluminescence spectroscopy to identify optically allowed transitions and help to clarify the band alignment.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg