Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.47: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Microfabricated SiN-masks for selective area epitaxy of InAs and GaAs — •Viktoryia Zolatanosha and Dirk Reuter — Optoelectronic Materials and Devices, University of Paderborn, Warburgerstr. 100, 33098, Paderborn, Germany

Selective area epitaxy (SAE) has the potential to open the path to novel semiconductor devices by allowing for laterally patterned material deposition. In SAE various types of masks define local areas, in which materials are deposited. In this contribution, we present a shadow mask approach for SAE in the InAs/GaAs-system.

The mechanical mask is realized from a SiN-membrane by employing nanofabrication technology allowing for hole sizes down to 100 nm. The membrane is made from a Si-wafer covered with 100 nm Si3N4 by anisotropic chemical etching of Si(100) employing KOH. The membrane itself is patterned by electron beam lithography and reactive ion etching. First test shows that the mask is fully compatible with ultra-high-vacuum and can withstand temperatures up to 800°C. GaAs and InAs deposited on the mask can be re-evaporated without damaging the mask.