Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.26: Poster

Tuesday, March 8, 2016, 15:00–19:00, Poster A

Influence of growth temperature on the optical and structural properties of Ga(N,As,P) quantum wells on silicon for laser application — •Sarah Karrenberg, Sebastian Gies, Martin Zimprich, Tatjana Wegele, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, and Wolfram Heimbrodt — Faculty of Physics and Material Science Center, Philipps University Marburg, D-35032 Marburg, Germany

Realizing suitable light sources for optical data transmission on silicon is one of the major goals of optoelectronic integration nowadays. The quaternary Ga(NAsP) is a promising candidate for this. Previously, we had optimized the annealing procedure of the necessary rapid-thermal-annealing. Here, we present an analysis of the influence of growth parameters on Ga(NAsP) quantum wells (QWs) on silicon. The optical and electronic properties are revealed using photoluminescence (PL), PL excitation and Raman spectroscopy. The structural properties are analyzed by transmission electron microscopy and high resolution X-ray diffraction. The conjunction of these methods reveals the striking influence of the growth temperature on the Ga(NAsP) QW composition, interfaces and luminescence properties. An in-depth analysis of the Ga(NAsP) disorder is presented. Furthermore, the changes in disorder upon increasing the growth temperature are connected to the accompanying structural changes in the QWs morphology. This allows us to reveal the optimal growth parameters in terms of structural and electronic properties of the Ga(NAsP)/Si material system.