Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Ultrafast Phenomena II

HL 37.1: Talk

Tuesday, March 8, 2016, 14:45–15:00, H10

Optical phonon relaxation and dynamic Fano effects of silicon (100) investigated by time-resolved spontaneous Raman scattering — •Jingyi Zhu, Rolf Baldwin Versteeg, Prashant Padmanabhan, Thomas Koethe, and Paul Herbertus Maria van Loosdrecht — II. Physikalisches Institut - Universität zu Köln, Zülpicher Straße 77, 50937 Cologne, Germany

The interaction of photo-induced charge carriers with photons initiates a complex dynamics including carrier cooling, carrier phonon scattering, and phonon relaxation. Here we revisit the incoherent optical phonons dynamics, electronic scattering, and hole-phonon interaction dynamics in silicon using time-resolved spontaneous Stokes and anti-Stokes Raman spectroscopy. Surprisingly, we observe a dynamic spectral asymmetry between the Stokes and anti-Stokes Raman scattering processes. The unusual asymmetry is thought to be mainly caused by the effects of the optically induced changes in the Fano interference between phonon and hole scattering.