Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 37: Ultrafast Phenomena II

HL 37.4: Hauptvortrag

Dienstag, 8. März 2016, 15:30–16:00, H10

Blasting semiconductor electrons with terahertz fields — •Mackillo Kira — Univ. Marburg, Germany

Present-day experiments can generate terahertz (THz) pulses having peak-field strengths around 100MV/cm. By limiting the THz pulse to few-cycles, one can both avoid structural damage and dominance of electron scattering during an excitation creating roughly a 1eV gradient over a 1Å distance. I will overview a cluster-expansion-based theory[1,2] to systematically explain how electrons as well as Coulomb-bound electronhole clusters[3] are excited and transported by extremely strong THz pulses. I will explain how a strong THz field induces an interplay of interband polarization and intraband currents during high-harmonic generation[4] (HHG) and an electronic quantum interference yielding a massive reshaping of the time-resolved harmonic emission[5]. Coulombic effects are demonstrated with THz wave mixing among Landau electrons[6] and with harmonic sideband generation (HSG) around an excitonic resonance. The identified HHG, HSG, quantum interference, and many-body effects can be combined to steer ultrafast processes in solids and to develop new light sources.

[1] M. Kira and S.W. Koch, Semiconductor Quantum Optics, (Cambridge Univ. Press, 2011). [2] M. Kira, Nat. Comm. 6, 6624 (2015). [3] O. Vänskä et al., Phys. Rev. Lett. 114, 116802 (2015). [4] O. Schubert et al., Nat. Photon. 8, 119 (2014). [5] M. Hohenleutner et al., Nature 523, 572 (2015). [6] T. Maag et al., Nat. Phys., doi:10.1038/nphys3559 (2015).