Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Oxide Semiconductors II
HL 38.4: Vortrag
Dienstag, 8. März 2016, 15:30–15:45, H13
Optical properties of β -Ga2O3 — •Nadja Jankowski1, Christian Nenstiel1, Gordon Callsen1, Zbigniew Galazka2, and Axel Hoffmann1 — 1Technische Universität Berlin, Berlin, Deutschland — 2Leibniz Institut für Kristallzüchtung, Berlin, Deutschland
β-Ga2O3 is a wide band gap semiconductor, which is suitable for many possible applications, such as transparent conducting oxides, UV-devices, high-temperature-stable gas sensors and dielectric coating for solar cells.
Structural and optical properties of the investigated β-Ga2O3 single crystal were examined by the means of Raman and photoluminescence spectroscopy.
As the exact band gap value of β-Ga2O3 is still under discussion, this work focuses on the determination of the band gap by performing photoluminescence excitation spectroscopy. The measurements exhibit excitation channels in the region of 4.6 to 5.0 eV, below the theoretically calculated band gap within recent publications. To clarify the origin of the excitation channel at 4.91 eV, temperature dependent photoluminescence excitation spectroscopy and absorption spectroscopy were performed.