HL 39: Silicon-based Semiconductors II
Dienstag, 8. März 2016, 14:45–15:45, H14
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14:45 |
HL 39.1 |
Doping of 4H-SiC with group IV elements — •Maximilian Rühl, Tomasz Sledziewski, Günter Ellrott, Theresa Palm, Heiko Weber, Michael Krieger, and Michel Bockstedte
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15:00 |
HL 39.2 |
LDOS matching in nanophotonic cavities using position-defined quantum dots — Magdalena Schatzl, •Florian Hackl, Martin Glaser, Moritz Brehm, Reyhaneh Jannesari, Friedrich Schäffler, and Thomas Fromherz
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15:15 |
HL 39.3 |
Tellurium hyperdoped Si: Flash lamp annealing vs. pulsed laser melting — •Mao Wang, Fang Liu, Ye Yuan, Slawomir Prucnal, Yonder Berencén, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
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15:30 |
HL 39.4 |
Disentangling Surface from Bulk Conductivity by Distance-dependent Four-Probe Transport Measurements Combined with an Analytical Conductance Model — •Sven Just, Helmut Soltner, Stefan Korte, Vasily Cherepanov, and Bert Voigtländer
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