Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 39: Silicon-based Semiconductors II

HL 39.2: Vortrag

Dienstag, 8. März 2016, 15:00–15:15, H14

LDOS matching in nanophotonic cavities using position-defined quantum dots — Magdalena Schatzl, •Florian Hackl, Martin Glaser, Moritz Brehm, Reyhaneh Jannesari, Friedrich Schäffler, and Thomas Fromherz — Institute of Semiconductor and Solid State Physics, Johannes Kepler University, A-4040 Linz, Austria

Si integrated optics is an absolutely required next step for the implementation of data rates currently required in data storage centers and in near future also for inter- and intra-chip communication. As a technologically less demanding alternative to hybrid integration of III-V material based emitters into a SOI based integrated optical platform, the monolithic integration of group IV based emitters for the telecom wavelength region is highly attractive. While for coherent radiation strained Ge, SnGe and glassy QD based lasers have been demonstrated recently, as emitter on the single photon level SiGe quantum dots combined with ultra-high Q nano-optical cavities are promising candidates. In our work, we combine site controlled growth of SiGe QDs with L3 type photonic crystal resonators defined by e-beam lithography for a systematic study of the influence of the QD position within the cavity on the photoluminescence efficiency. Using a series of identical cavities, each containing a single QD at accurately and systematically varied positions, by these experiments we map out the photonic local density of states (LDOS) of several optical cavity modes and demonstrate that by placing the QD at the correct position, we are able to control the emission mode of QDs.