Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: Silicon-based Semiconductors II
HL 39.3: Vortrag
Dienstag, 8. März 2016, 15:15–15:30, H14
Tellurium hyperdoped Si: Flash lamp annealing vs. pulsed laser melting — •Mao Wang1,2, Fang Liu1,2, Ye Yuan1,2, Slawomir Prucnal1, Yonder Berencén1, Lars Rebohle1, Wolfgang Skorupa1, Manfred Helm1,2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany
Chalcogen-hyperdoped silicon has been a topic of great interest due to its potential optoelectronic applications owing to the sub-band gap absorption [1-3]. In our work, tellurium hyperdoped Si was fabricated by ion-implantation with different fluences ranging from 1.09*1015 to 1.25*1016 cm-2 followed by two kinds of ultra-short annealing processing: flash lamp annealing (FLA) and pulsed laser melting (PLM). The Raman spectroscopy results reveal the high-quality recrystallization of tellurium implanted Si by both FLA and PLM. From the transport measurements, the conductivity increases with increasing tellurium concentration. High tellurium concentration samples show a finite conductivity as temperature trend 0. This indicates that the high concentration doping of tellurium induces an insulator-to-metal transition in Si although Te introduces a deep donor in Si.
[1] Kim, T. G., et al., Appl. Phys. Lett. 88, 241902 (2006) [2] Tabbal, M., et al., Appl. Phys. A 98, 589*594 (2010) [3] Umezu, I., et al., J. Appl. Phys. 113, 213501 (2013)