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HL: Fachverband Halbleiterphysik
HL 4: Spintronics: Nanostructures and Optics
HL 4.6: Talk
Monday, March 7, 2016, 10:45–11:00, H13
g-factor properties of electrons and holes confined in quantum dots emitting at telecom wavelengths — •Janina Schindler1, Vasilii V. Belykh1, Dmitri R. Yakovlev1,2, Evgeny A. Zhukov1, Matusala Yacob3, Johann P. Reithmaier3, Mohamed Benyoucef3, and Manfred Bayer1,2 — 1Experimentelle Physik 2, TU Dortmund, 44227 Dortmund, Germany — 2Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia — 3Institute of Nanostructure Technologies and Analytics, University of Kassel, 34132 Kassel, Germany
Spins in semiconductor quantum dots (QDs) are considered as highly attractive systems for future applications in the solid-state quantum information processing. In that context, the characterization of g-factors is very important to assess the spin dynamics for the semiconductor physics in general and for tailoring nanostructures in particular, since the dynamics are sensitive to shape anisotropies as well as spin-state mixing. We study electron and hole g-factors and dephasing times in a novel InAs/InAlGaAs/InP quantum dot ensemble by measuring time-resolved pump-probe ellipticity. The emission of the QDs lies in the telecommunication wavelength range around 1.55 µm, which is highly interesting for information-processing applications. We observe a surprisingly strong deviation of the electron g-factor from the Roth-Lax-Zwerdling equation, a strong dispersion of the hole g-factor and a significant out-of-plane anisotropy of the g-factors, in contrast to nearly isotropic in-plane properties.