Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Optical Properties I

HL 44.10: Vortrag

Mittwoch, 9. März 2016, 12:30–12:45, H10

Nonlinear optical coefficients of III-V semiconductors measured by Raman spectroscopy — •Christian Röder, Gert Irmer, Cameliu Himcinschi, and Jens Kortus — TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany

Applications based on nonlinear waveguides, frequency doubling, frequency mixing or phase conjugation require for design and optimization of devices an accurate knowledge of the linear and nonlinear optical response. Johnston and Kaminow [1] demonstrated for GaAs that Raman scattering can be used to determine the nonlinear optical coefficients below the bandgap. In case of wz-GaN there have been several experimental and theoretical studies with significant divergences concerning the coefficients of the second-harmonic generation (SHG) and the linear-optical effect (LEO). Due to the wurtzite structure of GaN symmetry requires three SHG and LEO coefficients to be considered independently. In the present study Raman scattering experiments were performed in order to determine all six coefficients of wz-GaN for the first time.
This work is financially supported by the European Union (European Social Fund) and by the Saxonian Government (grant no. 100231954).

[1] W.D. Johnston, Jr. and I.P. Kaminow: Phys. Rev. 188, 1209 (1969)