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HL: Fachverband Halbleiterphysik

HL 45: Hybrid and Perovskite Photovoltaics III (Joint session of CPP, DS and HL, organized by CPP)

HL 45.6: Vortrag

Mittwoch, 9. März 2016, 11:00–11:15, H11

XPS study of the ALD growth of Al₂O₃ on the CH₃NH₃PbI₃ — •Małgorzata Sowińska¹, Chittaranjan Das¹, Konrad Wojciechowski², Henry Snaith², and Dieter Schmeisser¹ — ¹Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany — ²Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX13PU, UK

Organic-inorganic lead halide perovskites have emerged as very attractive absorber materials for the fabrication of low cost and high efficiency solar cells, but a delicate nature of these films is one of the main challenges for a successful commercialization. Typically, when exposed to air or moisture, perovskite films degrade within a couple of hours or days. Moreover, the methylammonium lead triiodide (CH₃NH₃PbI₃) perovskite cannot sustain a prolonged annealing at temperatures around 85^∘C. In this work, we are investigating stability (upon air and thermal exposure) of a CH₃NH₃PbI₃ perovskite film coated with a thin layer of Al₂O₃ deposited by atomic layer deposition (ALD). In particular, the chemical and electronic changes occurred at the Al₂O₃/CH₃NH₃PbI₃ interface during the first 50 ALD cycles were monitored ex-situ by high-resolution and surface-sensitive synchrotron-based X-ray photoelectron spectroscopy (SR-XPS). The advantage of the ALD as a deposition method is that it can produce extremely dense layers with a very precise thickness control at room temperature. Detailed SR-XPS data analysis and a stability test of the perovskite film with alumina will be presented.