Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 46: Organic Semiconductors

HL 46.4: Talk

Wednesday, March 9, 2016, 10:45–11:00, H13

α,ω-Dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors — •Hannah Schamoni¹, Simon Noever², Bert Nickel², Max Kraut¹, Martin Stutzmann¹, and Jose A. Garrido³ — ¹Walter Schottky Institut und Physik-Department, Technische Universität München, Deutschland — ²Fakultät für Physik und CeNS, Ludwig-Maximilians-Universität München, Deutschland — ³Catalan Institute of Nanoscience and Nanotechnology, CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain

While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene are presented as a promising platform for in-electrolyte sensing. It is shown that the performance of the SGOFETs can be improved by choosing suitable growth parameters which lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and successfully simulated. Excellent transistor stability is confirmed by continuously operating the device over a period of several days. Altogether, our results demonstrate the feasibility of high performance and highly stable organic semiconductor devices for chemical or biochemical applications.