Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 47: Quantum Hall Effect
HL 47.5: Vortrag
Mittwoch, 9. März 2016, 11:00–11:15, H14
Narrow-gap semiconductor nanostructures in the quantum Hall regime — •Olivio Chiatti1, Christian Riha1, Johannes Boy1, Sergio Pezzini2, Steffen Wiedmann2, Christian Heyn3, Wolfgang Hansen3, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 12489 Berlin, Germany — 2High Field Magnet Laboratory, Radboud University Nijmegen, 6525ED Nijmegen, The Netherlands — 3Institut für Angewandte Physik, Universität Hamburg, 20355 Hamburg, Germany
The quantum Hall edge channels (QHECs) are crucial for our understanding of the underlying physics of the quantum Hall effect (QHE).
Our experimental work has been directed at studying the role of spin-orbit interaction (SOI).
We have combined quantum point contacts (QPCs) with in-plane gates and Hall-bars in a narrow-gap semiconductor heterostructure with strong SOI.
The constriction was fabricated by micro-laser photolithography and wet-chemical etching from an InGaAs/InAlAs quantum well with an InAs-inserted channel [1].
We have performed transport measurements at temperatures down to 300 mK in the combined QPC and Hall-bar structures in magnetic fields perpendicular to the 2DEG up to 33 T.
We observe conductance quantization through the QPC when QHECs are formed.
We investigate the effect of symmetric and asymmetric in-plane gate voltages on the transport by QHECs through the QPC.
[1] Chiatti et al., Appl. Phys. Lett. 106, 052102 (2015).