Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Quantum Dots and Wires: Microcavities
HL 48.3: Vortrag
Mittwoch, 9. März 2016, 10:00–10:15, H15
Far-field and quality factor optimized GaAs-based photonic crystal cavities for high collection efficiencies in quantum optical applications — •Stefan Hepp, Ulrich Rengstl, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Research Center SCoPE and Center for Integrated Quantum Science and Technology IQST, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
Photonic crystal cavities in combination with integrated
semiconductor quantum dots have become a fundamental element in present photonic research. High quality factors in combination with ultra-low mode volumes, below one cubic wavelength, make these photonic crystal structures interesting for a wide range of applications, such as the generation of non-classical light states or the investigation of cavity quantum electrodynamic (cQED) effects. However, a major issue is the off-plane radiation profile that features maxima at emission angles around 70∘ leading to very low collection efficiencies even with high numerical aperture (NA) objectives.
Here, we present a GaAs-based L3-photonic crystal cavity optimized for high quality factors with integrated InAs quantum dots. Additionally, we have modified the far-field emission properties for high collection efficiencies with low numerical aperture objectives that could be useful for quantum optical applications. Theoretical studies show, that the collection efficiency with a standard objective with NA=0.5 can be increased by a factor of 10 from around 7% up to almost 70%.