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09:30 |
HL 50.1 |
Molecular beam epitaxy and characterization of InGaN nanowires on Si (111) — •Saskia Weiszer, Andreas Zeidler, Maximilian Kolhep, and Martin Stutzmann
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09:45 |
HL 50.2 |
RF sputter deposition of AlN layers on different substrates — •Florian Hörich, Marc Hoffmann, Jürgen Bläsing, Armin Dadgar, and Andre Stritmatter
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10:00 |
HL 50.3 |
Growth of GaN nanowires on crystalline TiN films by molecular beam epitaxy — •David van Treeck, Gabriele Calabrese, Carsten Pfüller, Oliver Brandt, Lutz Geelhaar, and Sergio Fernández-Garrido
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10:15 |
HL 50.4 |
Germanium doping of cubic GaN — •Michael Deppe, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As
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10:30 |
HL 50.5 |
Manipulation of indium incorporation by anisotropic strain in non- and semipolar GaInN/GaN multi quantum well structures — •P. Horenburg, U. Rossow, R. Buss, F. A. Ketzer, H. Bremers, F. Tendille, P. De Mierry, P. Vennéguès, J. Zuniga-Perez, and A. Hangleiter
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10:45 |
HL 50.6 |
Epitaxieentwicklung AlN/GaN HEMTs für die Leistungselektronik bei hohen Frequenzen — •Birte-Julia Godejohann, Stefan Müller, Lutz Kirste, Steffen Breuer, Rolf Aidam, Klaus Köhler und Oliver Ambacher
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11:00 |
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30 min. Coffee Break
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11:30 |
HL 50.7 |
MOVPE growth and characterization of GaN based tunnel junctions employing highly Ge-doped GaN — •Silvio Neugebauer, Aqdas Fariza, Marc Hoffmann, Gordon Schmidt, Hartmut Witte, Jürgen Bläsing, Frank Bertram, Armin Dadgar, Jürgen Christen, and André Strittmatter
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11:45 |
HL 50.8 |
Evaluation and comparison of the intrinsic electric field of semipolar and polar InGaN/GaN QW structures — •Martina Dombrowski, Jan Wagner, Michael Jetter, and Peter Michael
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12:00 |
HL 50.9 |
Capacitance Voltage Spectroscopy of GaN Quantum Dot Ensembles — •Carlo Alberto Sgroi, Julien Brault, Arne Ludwig, and Andreas D. Wieck
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12:15 |
HL 50.10 |
Determination of polarization fields in InAlN/GaN heterostructures by capacitance-voltage-measurements — •Baran Avinc, Monir Rychetsky, Konrad Bellman, Ingrid Koslow, Tim Wernicke, Michael Narodovitch, Michael Lehmann, Silvio Neugebauer, Andre Strittmatter, Bernd Witzigmann, and Michael Kneissl
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12:30 |
HL 50.11 |
Modulation spectroscopy of semipolar InGaN/GaN light emitting diodes — •Stefan Freytag, Monir Rychetsky, Tim Wernicke, Ingrid Koslow, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, Martin Feneberg, Rüdiger Goldhahn, and Michael Kneissl
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12:45 |
HL 50.12 |
Structural characterization and scanning surface potential microscopy (SSPM) of C-doped GaN layers on Sapphire — •Aqdas Fariza, Hartmut Witte, Andreas Lesnik, Jürgen Bläsing, Peter Veit, Armin Dadgar, and Andre Strittmatter
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13:00 |
HL 50.13 |
Investigation of AlInN/GaN heterostructures by scanning tunneling and transmission electron microscopy — •Verena Portz, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, Rafal Dunin-Borkowski, and Philipp Ebert
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