Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 50: Gallium Nitride: Fabrication and Characterization
HL 50.5: Vortrag
Mittwoch, 9. März 2016, 10:30–10:45, H17
Manipulation of indium incorporation by anisotropic strain in non- and semipolar GaInN/GaN multi quantum well structures — •P. Horenburg1, U. Rossow1, R. Buss1, F. A. Ketzer1, H. Bremers1, F. Tendille2, P. De Mierry2, P. Vennéguès2, J. Zuniga-Perez2, and A. Hangleiter1 — 1Institute of Applied Physics, TU Braunschweig, Germany — 2Centre de Recherche sur l’Hétéro-Epitaxie, Valbonne, France
We demonstrate the effect of anisotropic strain on the In incorporation efficiency in m-plane and (1122)-oriented GaInN/GaN multi quantum well (MQW) structures. Inserting a partially relaxed AlInN buffer layer enables manipulation of the strain state in the MQW grown on top. One-dimensional lattice-matching of this AlInN layer to the underlying GaN epilayer induces partial strain relaxation along the perpendicular in-plane direction of the growth surface. This leads to modified lattice constants of the template for the MQW grown subsequently. All samples are grown via low pressure metalorganic vapour phase epitaxy on (1122) GaN templates on patterned r-sapphire or commercial m-oriented pseudo-bulk substrates. From structural and optical characterization by X-ray diffraction and photoluminescence measurements, we deduce an impact on the In incorporation efficiency and In concentrations in the quantum wells (QW) up to x=40% (semipolar) and x=38% (nonpolar) without additional strain energy being accumulated in the QW region. Taking into consideration the reduced quantum-confined Stark effect in such structures, this approach is very encouraging in search for efficient green light-emitting devices.