Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Gallium Nitride: Fabrication and Characterization

HL 50.8: Vortrag

Mittwoch, 9. März 2016, 11:45–12:00, H17

Evaluation and comparison of the intrinsic electric field of semipolar and polar InGaN/GaN QW structures — •Martina Dombrowski, Jan Wagner, Michael Jetter, and Peter Michael — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Centers SCoPE and IQST, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

One of the most promising material systems for green light emitting devices is InGaN/GaN. And still, one of the main issues to achieve high efficiency for light emitting devices is the appearance of piezoelectric fields in the active region. These lead to a tilt in the band structure and therefore to a reduced recombination efficiency. To overcome the effect of this so-called quantum confined Stark effect (QCSE), the active region can be grown on semipolar or nonpolar planes. In this work, we fabricated three-dimensional GaN pyramids by the selective area growth (SAG) method and used their side facets as semipolar GaN templates. To compare the effect of the reduced QCSE, semipolar and c-plane quantum wells (QW) were grown with different thicknesses emitting at the same spectral position. To evaluate the carrier dynamics, recombination efficiency and the strength of the electric field for both semipolar and polar QWs, optical characterizations by time-resolved photoluminescence were performed on these samples.