Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 52: Spintronics (incl. quantum dynamics) (Joint session of HL, MA and TT, organized by MA)
HL 52.3: Vortrag
Mittwoch, 9. März 2016, 10:00–10:15, H32
Spin Mapping of Surface and Bulk Rashba States in Ferroelectric α-GeTe(111) Films — •H. J. Elmers1, R. Wallauer1, M. Liebmann2, J. Kellner2, M. Morgenstern2, R.N. Wang3, J.E. Boschker3, R. Calarco3, O. Rader4, D. Kutnyakhov1, S.V. Chernov1, K. Medjanik1, C. Tusche5, M. Ellguth5, H. Volfova6, J. Braun6, J. Minar6, H. Ebert6, and G. Schönhense1 — 1Institut für Physik, Johannes Gutenberg-Universität Mainz — 2II. Physikalisches Institut B and JARA-FIT, RWTH Aachen — 3Paul-Drude-Institut für Festkörperelektronik, Berlin — 4Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin — 5Max Planck Institute for Microstructure Physics, Halle — 6Department Chemie, Ludwig-Maximilians-Universität München
Ferroelectric semiconductors like GeTe promise a switchable Rashba-parameter for electronic bulk states. A comprehensive mapping of the spin polarization of the electronic bands in α-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10.000 data points. In addition to the Rashba type splitting of surface bands we observe a spin splitting of bulk bands with opposite spin helicity of the inner and outer Rashba bands revealing the complex spin texture at the Fermi energy that determines electronic transport.