Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Poster II

HL 53.14: Poster

Mittwoch, 9. März 2016, 09:30–13:30, Poster A

Silicon incorporation in III/V-Nanowires - Comparison of growth and catalyst doping — •Marcel Schmidt, Rüdiger Schott, Sven Scholz, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Semiconductor Nanowires (NWs) have a big potential in the aim of further miniaturization of future nanoscale devices. A prerequisite for the fabrication of functional nanowire devices is their electrical doping. We investigate doping of nanowires due to implant doped metal seeds like gold silicon (AuSi) for catalyst assisted molecular beam epitaxy (MBE) growth of GaAs NWs. A focused ion beam system equipped with an ExB filter and a liquid metal alloy ion source (LMAIS) is used to implant the metal seeds. We will present first results, comparing Au and AuSi catalysed GaAs NWs.