Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.29: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
Electrical Properties of Single As-Grown Semiconductor Core-Shell Nanowires — •Danial Bahrami1, Genziana Bussone2, Jovana Colvin3, Hanno Küpers4, Ryan B Lewis4, Rainer Timm3, Lutz Geelhaar4, and Ullrich Pietsch1 — 1University of Siegen, Solid State Physics department , Siegen, Germany — 2Deutsches Elektronen-Synchrotron, Hamburg, Germany — 3Lund University, NanoLund and division of Synchrotron Radiation Research, Lund, Sweden — 4Paul Drude Institut für Festkörperelektronik, Berlin, Germany
Core-shell nanowire (NW) heterostructures have been employed in device applications including photonics, sensors, and electronics. Understanding and control of electrical properties, e.g. resistivity and mobility, in these NWs is necessary for their integration into the respective devices. For conventional conductivity studies, the NW is removed from the substrate, deposited horizontally and contacted with electrodes in as-called field-effect transistor geometry. Here, we report on conductivity measurements at single NWs in their as-grown geometry onto the substrate by means of FIB/SEM and AFM systems. Using either a tungsten nano-manipulator probe installed inside the FIB/SEM or a sharp metallic tip of a conductive AFM, the I-V characteristics of selected GaAs/InGaAs core-shell NWs grown by MBE onto Silicon (111) have been measured. The I-V characteristic always shows a nonlinear behavior with different slope comparing different NWs grown on the same substrate. The data can be analyzed in terms of thermoionic emission theory.