Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.36: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
GaAs nanowire photodetectors with avalanche multiplication — •Stepan Shvarkov1, Wadim Quiring2, Artur Zrenner2, and Dirk Reuter1 — 1Optoelektronische Materialien und Bauelemente, Universität Paderborn, Warburgerstr.100, 33098, Paderborn, Germany — 2Optoelektronik und Spektroskopie an Nanostrukturen, Universität Paderborn, Warburgerstr.100, 33098, Paderborn, Germany
Efficient single photon detectors (SPD) working at the telecom wavelength (1.5 um) are essential for the establishment of fiber-based quantum communication networks. GaAs-based heterostructures are in principle suited for this task. In this contribution, we present a SPD design based on a lateral p-i-n-junction within a nanowire. This should allow for efficient absorption of the photons and avalanche multiplication of the photo-generated carriers. The GaAs nanowires based detectors are fabricated using combination of optical and electron beam lithography. The formation of n- and p-type regions is realized by ion beam implantation through a hard mask. The non-implanted region of about 10 um separates n- and p-type areas. After post-implantation rapid thermal annealing and contacts fabrication the wires of a different thickness are fabricated using electron beam lithography and reactive ion etching. The devices show rectifying current-voltage characteristics typical for p-i-n junctions. The reverse biased nanowires show very low dark currents and are very sensitive to illumination which is attributed to the avalanche multiplication of the photo-generated electron-hole pairs.