Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.4: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
low temperature magneto-transport behavior in the phase change compound Sn1Sb2Te4 — •Zhe Yang1,2, Hanno Volker1, Nicholas P. Breznay3, and Matthias Wuttig1 — 1Department of Physics, RWTH Aachen University, Aachen, Germany — 2School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China — 3Department of Physics, University of California, Berkeley, Berkeley, United States
Disorder is a critical parameter to tailor the transport properties of phase change materials for an improved performance in memory devices. In this work, we have investigated crystalline Sn1Sb2Te4 samples where the disorder is tuned via annealing. Both the temperature dependence of the resistivity and the magnetoresistance have been studied. Hopping transport is observed in the strongly disordered state, while Boltzmann transport is found for the weakly disordered state. Our samples show a metal-insulator transition, which coincides with the divergence of the localization length. From magnetoresistance measurements at low temperature, we calculate the dephasing length induced by electron-electron scattering dephasing processes at the metallic side and derive its evolution near the MIT.