Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Poster II

HL 53.41: Poster

Mittwoch, 9. März 2016, 09:30–13:30, Poster A

Towards Nanowire Lasers Integrated onto Silicon Waveguides — •Daniel Ruhstorfer, Thomas Stettner, Bernhard Loitsch, Julian Treu, Benedikt Mayer, Gerhard Abstreiter, Gregor Koblmüller, and Jonathan Finley — Walter Schottky Institut and Physik Department, TU München, Garching, Germany

III-V semiconductor nanowires (NW) have been shown to be a highly promising candidate for the monolithic integration of nanoscale lasers on silicon [1,2]. In this work we present our progress towards the growth and demonstration of III-V NW lasers on low-order mode waveguides.

We investigate the coupling of GaAs/AlGaAs core shell NW lasers with shallow silicon ridge waveguides. Our FDTD simulations show a tunable optical coupling efficiency of up to 20% while at the same time preserving high modal reflectivities required for NW lasing.

In our design we use <111> silicon on insulator (SOI) substrates in which the waveguides are patterned using electron beam lithography and reactive ion etching. The SOI substrates provide the advantage of strong modal confinement by high refractive index contrast while its thick buried oxide also provides a high reflectivity at the substrate interface. By thermal oxidation of the silicon surface, the waveguides are covered with a thin protective layer of silicon oxide. We further delineate the entire fabrication scheme of GaAs/AlGaAs core-shell NW lasers on SOI by employing molecular beam epitaxial growth on predefined nucleation sites directly on the silicon ridge waveguides.

[1] B. Mayer, et al. Nature Comm. 4, 2961 (2013).

[2] B. Mayer, et al. Nano Lett. 15, just accepted (2015).