Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.7: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
The influence of nanopatterning on the electrical conductivity of boron-doped silicon nanowires — •Maximilian Kockert1, Stefan Weidemann1, Danny Kojda1, Zhi Wang2, Michael Kröner2, Peter Woias2, Klaus Rademann3, Martin Albrecht4, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, D-12489 Berlin — 2Laboratory for Design of Microsystems, University of Freiburg - IMTEK, D-79110 Freiburg — 3Institut für Chemie, Humboldt-Universität zu Berlin, D-12489 Berlin — 4Leibniz-Institut für Kristallzüchtung, D-12489 Berlin
Investigations of silicon nanowires (SiNWs) have shown, that nanopatterning affects the thermal conductivity of SiNWs, because of the reduced phonon contribution [1]. In this work, the resistivity ρ of bulk silicon and porous SiNWs was investigated to determine the influence of nanopatterning on the electrical properties. Van der Pauw measurements of bulk silicon show ρbulk=(1.60±0.01)·10−2 Ωcm. SiNWs were prepared from that highly boron-doped bulk silicon using the two-step metal-assisted chemical etching method [2]. SiNWs were contacted by means of electron beam-induced deposition. Two-terminal measurements of SiNWs show ρSiNWs=(1.1±0.2)·103 Ωcm. The difference between the resistivity of bulk silicon and silicon nanowires indicates a consumption of the dopant boron during the etching process.
[1] A. I. Hochbaum et al., Nature 451, 163 (2008).
[2] S. Weidemann et al., Journal of Nanomaterials 2015, 672305 (2015).