Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Poster II

HL 53.9: Poster

Mittwoch, 9. März 2016, 09:30–13:30, Poster A

Growth of Site-Controlled InAs Quantum Dots by MOVPE — •Marc Sartison, Mauro Bono, Leonard Spira, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Centers SCoPE and IQST, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

In the last decade, it has been demonstrated, that semiconductor quantum dots (QDs) have the potential to be excellent light sources for the application in single-photon devices. Stranski-Krastanov grown QDs with a high optical quality and structrual purity can be obtained self-assembled with a low spatial density. Hence, it is a challenging task to integrate QDs into optical circuits on chip, a precise control of the QD position is essential. It also has been shown, that the surface potential can be locally modified to create sites of higher nucleation probability by prepatterning the substrates. In this contribution, we present two approaches of the site-controlled growth of InAs QDs on prepatterned GaAs substrates. To create nucleation sites, the substrate is structured with a hexagonal hole pattern, which is etched by a combination of wet and dry chemical etching. Afterwards, the templates are overgrown with either GaAs buffer structures or with a burried strain iducing InGaAs layer. The nucleation behavior of the following deposited InAs QDs material is monitored by AFM and SEM measurements. To reveal the optical characteristics, the QDs were capped with a GaAs layer and micro-photoluminescence measurements were carried out.