Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 56: 2D Materials: Growth

HL 56.2: Vortrag

Mittwoch, 9. März 2016, 10:45–11:00, S053

Synthesis of high quality TaS₂ monolayer using molecular beam epitaxy — •Arlette S. Ngankeu, Charlotte E. Sanders, Marco Bianchi, Maciej Dendzik, and Philip Hofmann — Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark

The transition metal dichalcogenide TaS₂ has been intensively studied in its bulk form due to the rich properties arising from the interplay of electronic instabilities. As in many other materials, the electronic properties of TaS₂ might change in interesting ways in the thickness limit of a single layer. However, finding a good method for the production of high quality single layer TaS₂ is still a big challenge, and the thinnest crystals of TaS₂ obtained so far (by exfoliation of the TaS₂ bulk) actually have thicknesses of a few monolayers. In this talk, we report the first successful preparation of single- and few-layered TaS₂ on the Au(111) substrate by molecular beam epitaxy. Scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy have been used to probe the surface topography and electronic properties of TaS₂/Au.