Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 59: Optical Properties II
HL 59.4: Vortrag
Mittwoch, 9. März 2016, 15:30–15:45, H10
InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths — •Andrei Kors, Matusala Yacob, Johann P. Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Self-assembled semiconductor quantum dots (QDs) embedded in photonic crystals can be used as building blocks for future quantum information processing. Here, we report on the fabrication and optical characterization of InP-based photonic crystal microcavities embedded with InAs/InP QDs. Medium InAs/InP QD density emitting at the telecom wavelengths is grown by solid source molecular beam epitaxy. Using special capping technique and temperature processing after the dot formation, density of about 109 cm−2 is obtained. L3 photonic crystal air-bridge cavities are fabricated by electron beam lithography, inductively coupled plasma reactive ion etching and wet etching technique. Optical properties of microcavities such as polarization, emission wavelengths and quality factors are determined by micro-photoluminescence measurements. Results reveal sharp cavity modes at telecom wavelengths.