Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 60: III-V Semiconductors (no Nitrides)
HL 60.1: Vortrag
Mittwoch, 9. März 2016, 14:45–15:00, H13
Electronic Transport Properties of Novel Superlattice GaAs/AlAs Nanowire Heterostructures — •Jakob Seidl1, Dominik Irber1, Jonathan Becker1, Stefanie Morkötter1, Bernhard Loitsch1, Daniel Rudolph1, Julia Winnerl1, Markus Döblinger3, Nari Jeon2, Max Bichler1, Matthew Grayson4, Lincoln J. Lauhon2, Gregor Koblmueller1, Jonathan J. Finley1, and Gerhard Abstreiter1 — 1Walter Schottky Institut and Physik Department, TU München, Garching, Germany — 2Department of Materials Science and Engineering, Northwestern University, Evanston, U.S.A. — 3Department of Chemistry, LMU München, Munich, Germany — 4Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, U.S.A.
This work focuses on recent developments of GaAs/AlAs superlattice shell Nanowire MODFETs. We present a new design based on multiple alternating MBE-grown GaAs/AlAs layers around a GaAs core, promising enhanced electronic properties. The high structural quality of the device is confirmed using both STEM and APT techniques. Electrical transport measurements probing the FET characteristics reveal low resistance ohmic contacts and outstanding top gate performance at ambient temperature, as well as 4.2K, without the need for illumination. At RT, we obtained contact resistances of R = 1 kΩ, subthreshold swings of about SS = 70 mV/dec and mobilities up to µ = 700 cm2/Vs. The transfer characteristics at 4.2 K show steplike features related to a discrete electronic subband structure in very good agreement with numerical simulations performed using nextnano.