Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 60: III-V Semiconductors (no Nitrides)
HL 60.7: Vortrag
Mittwoch, 9. März 2016, 16:45–17:00, H13
Terahertz magneto-optical activity of III-V semiconductors — •Jan Chochol1,2, Kamil Postava1, Michael Čada2, Mathias Vanwolleghem3, Dominique Vignaud3, Martin Mičica1,3, and Jaromír Pištora1 — 1VŠB - Technical University of Ostrava, Czech Republic — 2Dalhousie University, Halifax, Canada — 3Université Lille 1, Villeneuve-d’Ascq, France
The recent advances in terahertz technology have put a demand for new materials and devices capable of operating with submillimeter waves. One of the desired properties is the non-reciprocity, which is usually achieved by magnetic field. In such magnetic field, materials with free carriers exhibit induced anisotropy. We examine the induced anisotropy of III-V semiconductors (GaAs, InP, InSb) by studying the magneto-optical Kerr effect with the terahertz time domain spectroscopy and FTIR spectroscopy - the spectral range from 2 to 680 cm−1. Notably for pure InSb we report a strong effect using a small magnetic field (~0.3 T). The calculation of the semiconductor permittivity is based on the Drude-Lorentz model[1] and the concentration and mobility of carriers is verified using Hall measurements.
[1] Palik, E. D., and J. K. Furdyna. Infrared and Microwave Magnetoplasma Effects in Semiconductors. Reports on Progress in Physics 33, no. 3 (1970): 1193.