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14:45 |
HL 62.1 |
Charge carrier localization in submonolayer InN/GaN superlattices — •Felix Feix, Timur Flissikowski, Caroline Chèze, Raffaella Calarco, Holger T. Grahn, and Oliver Brandt
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15:00 |
HL 62.2 |
Control of optical polarization properties by anisotropic strain in non- and semipolar GaInN/GaN quantum wells — •F. A. Ketzer, P. Horenburg, E. R. Buss, H. Bremers, U. Rossow, F. Tendille, P. De Mierry, P. Vennéguès, J. Zuniga-Perez, and A. Hangleiter
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15:15 |
HL 62.3 |
Optical properties of two dimensional photonic crystal membranes in cubic AlN — •Sarah Blumenthal, Matthias Bürger, Andre Hildebrandt, Jens Förstner, Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As
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15:30 |
HL 62.4 |
Role of coherency strain for optical properties of InxGa1−xN active layers grown on GaN substrates — •Christoph Freysoldt, Siyuan Zhang, Ying Cui, and Jörg Neugebauer
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15:45 |
HL 62.5 |
Photoluminescence excitation measurements of molecular beam epitaxial grown cubic GaN/Al(Ga)N quantum well structures — •Tobias Wecker, Gordon Callsen, Axel Hoffmann, Dirk Reuter, and Donat J. As
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16:00 |
HL 62.6 |
Optical and electronic properties of InGaN/GaN core-shell microrod light emitting diodes — •Marcus Müller, Peter Veit, Frank Bertram, Christian Nenstiel, Gordon Callsen, Matin Mohajerani, Jana Hartmann, Hao Zhou, Hergo-H. Wehmann, Axel Hoffmann, Andreas Waag, and Jürgen Christen
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16:15 |
HL 62.7 |
Charge transfer across the GaN nanowire / electrolyte interface — •Jan Philipps, Sara Lippert, Pascal Hille, Jörg Schörmann, Detlev Hofmann, and Martin Eickhoff
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16:30 |
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30 min. Coffee Break
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17:00 |
HL 62.8 |
Defect analysis of (1122) semipolar GaN materials and devices — •Matthias Hocker, Ingo Tischer, Marian Caliebe, Ferdinand Scholz, and Klaus Thonke
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17:15 |
HL 62.9 |
Investigation of confined exciton luminescence of PAMBE-grown AlGaN/GaN nanowires for single photon applications — •Johannes Dühn, Pascal Hille, Jörg Schörmann, Martin Eickhoff, Jürgen Gutowski, and Kathrin Sebald
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17:30 |
HL 62.10 |
InGaN/GaN nanowire heterostructures for multifunctional optochemical sensor systems — •Sara Lippert, Marc Riedel, Christian Dern, Jens Wallys, Ervice Pouokam, Pascal Hille, Jörg Teubert, Fred Lisdat, Martin Diener, and Martin Eickhoff
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17:45 |
HL 62.11 |
Analysis of in-situ reflectance measurements during growth of AlInN/GaN Bragg reflectors — •Christoph Berger, Armin Dadgar, Jürgen Bläsing, and André Strittmatter
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18:00 |
HL 62.12 |
Nanoscale (in)homogeneities of a thick In0.2Ga0.8N layer grown on high quality bulk GaN substrate — •Max Trippel, Gordon Schmidt, Peter Veit, Sebastian Metzner, Thomas Hempel, Silke Petzold, Frank Bertram, Marlene Glauser, Lise Lahourcade, Raphaël Butté, Jean-François Carlin, Nicolas Grandjean, and Jürgen Christen
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18:15 |
HL 62.13 |
AlN growth transition between step flow growth and step bunching — •Konrad Bellmann, Alexander Sabelfeld, Christian Kuhn, Tim Wernicke, and Michael Kneissl
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