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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 69: Focussed Session: Oxide Semiconductors for Device and Energy Applications 1

Donnerstag, 10. März 2016, 09:30–13:15, H11

09:30 HL 69.1 Topical Talk: Oxide semiconductors: materials design and applications — •Hideo Hosono
10:15 HL 69.2 Topical Talk: Mixing In and Ga sesquioxides - and their polar phases — •Vincenzo Fiorentini
10:45 HL 69.3 Topical Talk: Exploring and tailoring conductance phenomena in oxide films: An STM study — •Niklas Nilius
  11:15 15 min. break.
11:30 HL 69.4 Topical Talk: Miscibility and phase separation in (InxGa1−x)2O3 — •Martin Albrecht, Robert Schewski, Toni Markurt, Tobias Schulz, Michele Baldini, Günter Wagner, Holger von Wenckstern, Marius Grundmann, Hartwin Peelaers, Joel Varley, and Chris Van de Walle
12:00 HL 69.5 Infrared response of cubic In2O3 — •Martin Feneberg, Christian Lidig, Jakob Nixdorf, Oliver Bierwagen, James S. Speck, Zbigniew Galazka, and Rüdiger Goldhahn
12:15 HL 69.6 Electrical conductivity and gas-response of the In2O3 surface electron accumulation layer — •Julius Rombach, Oliver Bierwagen, Alexandra Papadogianni, Markus Mischo, Volker Cimalla, Oliver Ambacher, Theresa Berthold, Marcel Himmerlich, and Stefan Krischok
12:30 HL 69.7 Surface structure of β-Ga2O3(100) via classical and quantum mechanical rainbow scattering — •Marco Busch, Eric Meyer, Helmut Winter, Zbigniew Galazka, Klaus Irmscher, and Konrad Gärtner
12:45 HL 69.8 Vibrational spectra, Raman and IR properties of Copper-Oxide Phases from first principles — •Marcel Giar, Markus Heinemann, and Christian Heiliger
13:00 HL 69.9 Optical properties of single crystalline SrMoO3 thin films — •Aldin Radetinac, Jörg Zimmermann, Karoline Hoyer, Hongbin Zhang, Philipp Komissinskiy, and Lambert Alff
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DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg