Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 70: Semiconductor Lasers I
HL 70.12: Vortrag
Donnerstag, 10. März 2016, 12:45–13:00, H13
Semiconductor quantum membrane external-cavity surface-emitting laser — •Hermann Kahle1, Cherry M. N. Mateo2, Roman Bek1, Uwe Brauch2, Michael Jetter1, Thomas Graf2, and Peter Michler1 — 1Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen IHFG and research centers IQST and SCoPE, Allmandring 3 — 2Universität Stuttgart, Institut für Strahlwerkzeuge IFSW and research center SCoPE, Pfaffenwaldring 43
Due to their simplicity and the efficient optical pumping, vertical external-cavity surface-emitting lasers (VECSELs) are becoming more and more important systems. Furthermore, the good beam quality as well as the open resonator which enables the use of intra-cavity (ic) frequency selective/multiplying elements make them laser systems with an unique palette of benefits. The use of semiconductors as gain material allows bandgap engineering and provides a broad gain. However, most VECSEL systems suffer from the bad thermal conductivity of the substrate and the DBR. A wet-chemically released active region of a VECSEL, sandwiched between anti-reflection coated diamond ic heatspreaders leads to an improved thermal behavior. The absence of the DBR allows us to use regular laser mirrors in the resonator and therefore completely exploit the gain provided by the active region. We present first characterisation measurements of the optically pumped semiconductor quantum membrane external-cavity surface-emitting laser (OPS-MECSEL or QML).