Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 70: Semiconductor Lasers I

HL 70.4: Vortrag

Donnerstag, 10. März 2016, 10:15–10:30, H13

On the threshold behavior of high-β quantum dot micropillar lasers — •Sören Kreinberg¹, Weng W Chow², Christian Schneider³, Frank Jahnke⁴, Sven Höfling³, Janik Wolters¹, Martin Kamp³, Christopher Gies⁴, and Stephan Reitzenstein¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, Germany — ²Sandia National Laboratories, Albuquerque, NM, USA — ³Technische Physik, Julius-Maximilians-Universität Würzburg, Germany — ⁴Institut für Theoretische Physik, Universität Bremen, Germany

We present a comprehensive study on the transition between spontaneous emission and stimulated emission of quantum dot microcavities in the regime of cavity quantum electrodynamics (cQED). The structures are based on high-quality, high-β semiconductor GaAs/AlAs micropillar cavities containing a single layer of optically pumped InGaAs quantum dots (QD) as active medium. A widely used criterion for lasing is a characteristic non-linearity in the in the input-output curve which gradually vanishes with increasing β values in micro- and nanolasers. To provide a conclusive lasing criterion, we show that QD micropillar cavities with almost identical intensity and spectral properties can be easily categorized into lasing and non-lasing classes by analysis of the equal-time second-order photon autocorrelation by means of a Hanbury-Brown and Twiss setup and the excitation-dependent impulse response of the system using time resolved spectroscopy. For a comprehensive picture, we compare our results to a microscopic theory to clearly identify lasing criteria in high-β microcavities.