Regensburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 70: Semiconductor Lasers I
HL 70.8: Talk
Thursday, March 10, 2016, 11:45–12:00, H13
Optimization of the cavity design for passively mode-locked VECSELs in the red spectral range — •Quynh Duong-Ederer1, Roman Bek1, Hermann Kahle1, Thomas Schwarzbäck2, Michael Jetter1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Research Center SCoPE and IQST, Universität Stuttgart, Allmandring 3, 70569 Stuttgart — 2TRUMPF Lasersystems for Semiconductor Manufacturing GmbH, Johann-Maus-Straße 2, 71245 Ditzingen
Since the first demonstration of a passively mode-locked VECSEL in 2002, this type of semiconductor laser has become a fundamental element in present research. Pulsed lasers directly emitting in the red spectral range are promising candidates for many applications ranging from spectroscopy to biomedical fields. We successfully demonstrated a SESAM mode-locked VECSEL emitting at around 660 nm with a pulse duration of 2 ps and a repetition rate of 850 MHz. However, due to the cavity design the maximum peak power was limited.
We present in this contribution major improvements to overcome this circumstance. First the plane diamond heat spreader is replaced by a wedged one with a wedged angle of 2∘ and an anti-reflection coating for the target wavelength. Furthermore, the gain chip mount is modified to match the wedged heat spreader for an enhanced heat dissipation from the chip. This enables us to increase the optical pump power without a thermal roll-over of the device resulting in higher peak power and a stable performance of our mode-locked laser.