Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 71: Quantum Dots and Wires: Optical Properties

HL 71.6: Vortrag

Donnerstag, 10. März 2016, 10:45–11:00, H15

Quenching the PL emission of GaN QDs by local FIB-implantation — •Charlotte Rothfuchs¹, Tristan Koppe², Nadezhda Kukharchyk¹, Hans-Werner Becker³, Fabrice Semond⁴, Mathieu Leroux⁴, Sarah Blumenthal⁵, Donat Josef As⁵, Hans Hofsäss², Andreas D. Wieck¹, and Arne Ludwig¹ — ¹Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum — ²II. Physikalisches Institut, Georg-August-Universität Göttingen, D-37077 Göttingen — ³RUBION, Ruhr-Universität Bochum, D-44780 Bochum — ⁴CNRS-CRHEA, F-06560 Valbonne — ⁵Department Physik, Universität Paderborn, D-33098 Paderborn

Nowadays, there is an increasing interest in quantum communication technology. GaN QDs as single semiconductor photon sources could be key components for such applications. One possible pathway towards the realization is the post-selection of molecular beam epitaxy-grown QDs by focused ion beam (FIB) implantation. This approach aims for the disabling of all QDs around an intentional one, based on the creation of non-radiative defects in the irradiated regions. Here, we present an unprecedented study on the lattice disorders in the vicinity of both hexagonal and cubic self-assembled GaN/AlN QDs introduced by FIB implantation of gallium ions amongst others. The impact of the ion implantation is investigated by low-temperature and additional temperature-dependent PL measurements. We extend a simple model for the PL degradation of InAs QDs to describe the quenching of the PL emission in the GaN/AlN material system. In particular, the quantum confined Stark effect in the hexagonal QDs is taken into account.