Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Functionalization of Semiconductors I

HL 72.1: Hauptvortrag

Donnerstag, 10. März 2016, 09:30–10:00, H16

Group IV alloys: New tricks with Silicon — •Detlev Grützmacher — Peter Grünberg Institute - 9 and JARA-FIT, Forschungszentrum Jülich, 52425 Jülich, Germany

Group IV alloys, namely semiconductor alloys composed from C, Si, Ge and Sn offer new routes for band engineering on Si. In particular GeSn alloys have been predicted to have a fundamental direct band gap more than 30 years ago. Using reactive gas source epitaxy (RGSE) finally the limitations due to Sn precipitation and low solubility of Sn in Ge have been overcome and prestine crystal quality is achieved. Optically pumped lasers using various geometries have been fabricated from GeSn alloys with Sn concentrations up to 14.5%. Light emitting diodes (LED)working at room temperature have been realised using p- and n-type doped GeSn layers. Additionally, hetero- and multiple quantum well structures including SiGeSn, GeSn and strained Ge layers have been deposited and employed for LEDs. Moreover, the low effective mass of electron and holes in GeSn alloys and accordingly their predicted high mobility and carrier injection velocity makes these alloys interesting candidates for ultra low power devices. The potential of group IV alloys as a platform for electronic-photonic integrated circuitry is discussed.