Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Functionalization of Semiconductors I

HL 72.2: Vortrag

Donnerstag, 10. März 2016, 10:00–10:15, H16

MOVPE growth studies of Ga(PBi) on GaP and on GaP/Si — •Lukas Nattermann, Nikolai Knaub, Andreas Beyer, Wolfgang Stolz, and Kerstin Volz — Materials Sciences Center and Faculty of Physics, Philipps-Universität Marburg, Germany

Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers. In the last few years a growing body of literature has emerged, especially on the growth and characterization of Ga(AsBi) on GaAs. The growth on GaP makes achieving a direct band gap on Si possible by alloying Bi and N. In this work we will present the first Ga(PBi) structures grown with metal organic vapour phase epitaxy on GaP and on GaP on Si. By careful characterization with high resolution X-ray diffraction, atomic force microscopy, secondary ion mass spectrometry, photoluminescence spectroscopy and scanning transmission electron microscopy, we will show that we have achieved high quality Ga(PBi) with Bi fractions up to 8%. Carbon incorporation due to low temperature growth as well as results from optical measurements will be discussed.

Acknowledgements: We gratefully acknowledge support from German Science Foundation (DFG) in the framework of the RTG1782 "Functionalization of Semiconductors".