Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 72: Focus Session: Functionalization of Semiconductors I
HL 72.4: Hauptvortrag
Donnerstag, 10. März 2016, 10:30–11:00, H16
SiGe heterostructures for photonics interconnects — •Giovanni Isella1, Jacopo Frigerio1, Andrea Ballabio1, Daniel Chrastina1, Vladyslav Vakarin2, Papichaya Chaisakul2, Laurent Vivien2, and Delphine Marris-Morini2 — 1L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy — 2IEF, Univ. Paris-Sud, CNRS, Univ. Paris-Saclay, UMR 8622, Bât. 220, 91405 Orsay Cedex, France
Over the last years Ge/SiGe multiple quantum wells (MQW) have received a great attention in the context of silicon photonics for the realization of efficient electro-absorption modulators based on the quantum confined Stark effect. At present day, one of the main challenges toward the integration of Ge/SiGe MQW modulators is their coupling with Si-compatible passive optical components such as waveguides. In particular, the integration with silicon waveguides is very difficult due to the presence of a thick SiGe layer which act as a virtual substrate (VS) for the MQW stack. We demonstrate that the VS can be used as a low loss optical waveguide by choosing a suitable compositional mismatch with respect to the MQW stack. A photonic interconnection made by a Ge/SiGe MQW modulator connected to a Ge/SiGe MQW photodetector through a SiGe waveguide has been fabricated and tested in order to demonstrate the great potential of this approach. More complex SiGe heterostructures, such as coupled QWs can be employed to attain efficient phase modulation. Moreover the building blokcs required for the fabrication of passive waveguide devices such as ring-resonators and optical filters can also be implemented in a SiGe material platform.