Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Focus Session: Functionalization of Semiconductors I

HL 72.6: Vortrag

Donnerstag, 10. März 2016, 12:00–12:15, H16

Quantitative investigation of high resolution HAADF STEM images of Ga(NAsP) laser structures — •Lennart Duschek, Tatjana Wegele, Andreas Beyer, Wolfgang Stolz, and Kerstin Volz — Material Sciences Center and Faculty of Physics, Philipps-Universität Marburg, Germany

Growing suitable III/V laser structures for optical data transmission on silicon substrate is a highly focused goal to achieve the integration of optics on electronic devices. The quaternary material system Ga(NAsP) is a promising candidate because it can be grown lattice-matched on silicon substrate and is a direct bandgap semiconductor. Due to its metastability, Ga(NAsP) has to be grown at rather low temperatures, i.e. 575°C. Post- growth thermal annealing allows the reduction of certain types of structural defects and thus improves the optical properties. Annealing at high temperatures e.g. 975°C can cause changes in the structure of the material [1]. This contribution will show high resolution scanning transmission electron microscopy images (STEM) of Ga(NAsP) with different Nitrogen and Phosphorous concentration, recorded at varied detector regions, collecting electrons scattered in different angles. Furthermore simulation results of these given structures will be shown and discussed in comparison to the experimental images. Acknowledgements: We gratefully acknowledge support from German Science Foundation (DFG) in the framework of the RTG1782 "Functionalization of Semiconductors".

[1]*S. Gies et al., J. Cryst. Growth, vol. 402, pp. 169*174, Sep. 2014.