Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 72: Focus Session: Functionalization of Semiconductors I
HL 72.7: Vortrag
Donnerstag, 10. März 2016, 12:15–12:30, H16
Identification of anti-phase boundaries on a GaP/Si(001) cross-sectional surface — Christopher Prohl1, Henning Döscher2, Peter Kleinschmidt2, Thomas Hannappel2, and •Andrea Lenz1 — 1Technische Universität Berlin, Institut für Festkörperphysik, 10623 Berlin, Germany — 2Helmholtz Center Berlin for Materials and Energy, 14109 Berlin, Germany
GaP-based materials are of high interest for realization of epitaxial integration of III-V layers for optoelectronics on Si(001) substrates due to the small lattice mismatch of GaP compared to Si. However, the growth of polar GaP on non-polar Si substrates leads to anti-phase domains accompanied with anti-phase boundaries (APBs), which are charged structural defects, reducing the device performance. Here, we present a cross-sectional scanning tunneling microscopy (XSTM) investigation of APBs at an epitaxially grown GaP/Si(001) interface. The APB can be identified by a brighter contrast and by surface step edges starting/ending at the position of an APB. The specific image contrast mechanisms of APBs oriented along different directions are discussed in detail. On the atomic scale the change of the atomic position of P and Ga atoms along growth direction is directly observed, in agreement with the structure model of APBs in the GaP lattice.
This work was supported by the DFG, project LE 3317/1-1.