Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 72: Focus Session: Functionalization of Semiconductors I
HL 72.8: Vortrag
Donnerstag, 10. März 2016, 12:30–12:45, H16
Gain Spectroscopy on Ga(N,As,P)/(B,Ga)(As,P) Heterostructures — •Florian Dobener1, Peter Ludewig2, Kerstin Volz1, Wolfgang Stolz1,2, and Sangam Chatterjee1 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany
The realization of monolithically integrated on-chip laser sources for optical data transmission remains one of the major goals of optoelectronic integration nowadays. The quaternary III-V material system Ga(N,As,P) promises to fulfil this task as composition variations allow both, bandgap engineering and tuning of the lattice constant through the control of nitrogen and phosphorous incorporation, potentially covering the near-infrared regime as well as the datacom wavelength.
Here, we investigate two series of Ga(N,As,P) multiple quantum well samples grown by metal-organic vapour-phase epitaxy. Either the substrate temperature or the chemical composition was systematically varied. Room temperature optical gain measurements by the variable stripe-length method show a maximum modal gain of about 100 cm−1 for the best samples, helping to identify the optimum growth conditions according to the amplification performance.