Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 73: Heterostructures and Interfaces (Joint session of HL and O, organized by HL)
HL 73.2: Vortrag
Donnerstag, 10. März 2016, 09:45–10:00, H17
Interfacial Doping of a MoS2 Monolayer in a 2D Heterostructure — •Mahfujur Rahaman1, Gerd Plechinger2, Raul D. Rodriguez1, Christian Schüller2, Tobias Korn2, and Dietrich R.T. Zahn1 — 1Semiconductor Physics, Technische Universität Chemnitz,09126 Chemnitz, Germany — 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
We report on the interfacial doping of the transition metal dichalcogenide MoS2 monolayer in contact with GaSe and graphite (HOPG). Photoluminescence (PL) results suggest that the PL emission of MoS2 monolayer on top of GaSe is dominated by neutral excitons. This is in contrast to MoS2 in contact with HOPG where trions dominate the PL due to n-type doping. Raman spectroscopy investigations indicate e- doping of the MoS2 monolayer on top of HOPG reflected by the change in A1g out-of-plane mode. Finally, the carrier concentration of MoS2 monolayers for both interfaces is quantitatively determined by Kelvin probe force microscopy (KPFM). Our results pave the way for simple, scalable, and patterned doping in order to modify the electrical and optical properties of MoS2 monolayers and other 2D materials by engineering the graphite substrate.